SAN JOSE, Calif. — TriQuint Semiconductor Inc. said that it has place the largest commercial gallium nitride (GaN) wafer order in the history of IQE Plc.
The wafers will support ongoing development efforts and the roll out of GaN products by TriQuint (Hillsboro, Ore.). TriQuint's initial product and process releases will target the 2-to-20-GHz range.
TriQuint's recent order for GaN epitaxial high electron mobility transistor (HEMT) wafers from IQE's New Jersey facility will also be used in ongoing military and commercial R & D efforts.
''IQE's established track record in providing TriQuint with reliable, high-quality products was a key factor in selecting them to produce and deliver a range of advanced GaN epitaxial materials,'' said TriQuint Research and Development Manager, Anthony Balistreri, in a statement. ''We've developed a close working relationship with IQE throughout the development phase of our GaN program.''
Since being awarded a multi-year GaN research development contract in excess of $30 million by the Defense Advanced Research Projects Agency (DARPA) in 2005, TriQuint has devised a new class of GaN-based amplifiers. GaN amplifier technology has garnered military and commercial interest because of its ability to operate more efficiently and with greater power density.
