Chelmsford, MA — Hittite Microwave Corporation has released chip and SMT GaAs pHEMT MMIC power amplifiers, designated HMC637 and HMC637LP5 respectiveley, which are ideal for military EW, test & measurement equipment, and telecom applications from DC to 6 GHz.
The HMC637 is a GaAs pHEMT MMIC power amplifier chip that is rated from DC to 6 GHz, and delivers 14 dB gain, +30 dBm saturated output power, and +41 dBm output IP3. The power amplifier also delivers consistent output IP3 and excellent gain flatness of ±0.6 dB across its rated bandwidth. This versatile power amplifier chip requires no external matching components, occupies an area of 7.3 mm², and consumes only 400 mA from a +12 V supply.
For applications where an SMT compatible solution is preferred, the HMC637LP5 offers similar performance to the HMC637, and is housed in a RoHS compliant 5x5 mm leadless QFN SMT package. Both the versions are ideal for military EW and ECM, test and measurement, and wideband telecom applications.
Further information and data sheets for the HMC637 and HMC637LP5 are available.
