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Top five handset OEM signs first Coolteq deal with Nujira

By Jean-Pierre Joosting
Microwave Engineering
April 28, 2009 (01:31 PM EST)
 


Cambridge, UK — Nujira has announced that a major global OEM has signed a purchase agreement for its Coolteq™-l handset development platform, the first since the technology was announced at Mobile World Congress in February 2009.

Prior to purchasing the development platform, the OEM conducted an in-depth assessment of Nujira's Coolteq technology; the results of this assessment matched Nujira's own claims for the technology.

Commenting, Tim Haynes, Nujira CEO said, "This is the first time Coolteq-l has been independently assessed by a major handset OEM and we are delighted that our own measurements of the power consumption and bill of materials advantages have been confirmed by our customer."

Test results show that a handset PA using Coolteq-l with embedded HAT technology is twice as power efficient during HSUPA transmissions, and 1.5 times as efficient during W-CDMA transmissions compared with the same PA without Coolteq-l. The benefits are even more pronounced as data rates increase and the technology is thus highly applicable for future LTE handsets.

Coolteq-l enables the creation of an efficient wideband RF front end, covering three to five times the bandwidth of a standard design with up to double the efficiency. Only two PAs (power amplifiers) would be needed to design a front end covering all of the fourteen different frequency bands defined in the 3GPP for LTE and all of the operating modes (GSM, EDGE, WCDMA, HSUPA and LTE), compared with seven or more without the company's solution thus achieving a significant reduction in the handset bill of materials.


For further information visit www.nujira.com.


 
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