Woburn, MA — A suite of low noise amplifiers (LNAs) featuring pseudomorphic high electron mobility transistor (pHEMT) and silicon germanium (SiGe) technologies has been introduced by Skyworks Solutions.
This high performance, low cost product family serves various industry applications including GPS; infrastructure such as GSM, WCDMA and LTE base station transceivers; ISM band and satellite radio; and WLAN markets. In addition, the company is expanding into higher frequency, higher linearity, and even lower noise figures with the company's latest pHEMT7 technology and enhancement mode pHEMT devices.
The discrete pHEMT devices have been designed specifically to achieve ultra low noise to support the high performance requirements for modern receiver designs, while SiGe technology has been used to produce integrated LNA devices that address the issues of low cost and efficiency while providing the added functionality of silicon.
The SKY65050-372LF low noise transistor, the first released product in this family, is a high performance, low noise, n-channel, depletion mode pHEMT, fabricated from the company's advanced pHEMT process and packaged in a miniature 4-lead SC-70 package. The transistor's low noise figure, high gain, and excellent third order intercept (IP3) allows it to be used in various receiver and transmitter applications.
The transistor is lead (Pb)-free, restriction of hazardous substances (RoHS) compliant, conforms to the environmental impact assessment (EIA)/European information and communications technology industry association (EICTA)/Japan electronics and information technology industries association (JEITA) joint industry guide (JIG) Level A guidelines, and is free from antimony trioxide and brominated flame retardants.
It has been released with a full toolkit of application resources to assist in securing new sockets. In addition, the new device will allow for higher gain and linearity while still providing noise figure solutions below 0.7 dB.
For further information visit www.skyworksinc.com.
