Measuring leakage current in RF power transistors: Page 6 of 6

October 26, 2011 //By William R. Murphy, Richardson RFPD
Around the globe, engineers and technicians using RF power devices have had many concerns regarding the specifications for leakage current, what the specifications mean in terms of the part's performance in the field, and most importantly, how to properly test/verify that a given part is meeting its printed leakage current specification...
information on this topic is available at Richardson RFPD's RF Power Transistor Matching, Testing, and Sorting web page .

About the author

William R. (Bill) Murphy earned a Bachelor of Science degree in Electrical Engineering (BSEE) from the University of Illinois at Urbana-Champaign, an MBA degree from the University of Chicago, and an MSEE degree from the Illinois Institute of Technology (IIT). He is currently the Technical Marketing Manager for Richardson RFPD, Inc. in LaFox, Illinois. He began his career as an RF design engineer and later served in various marketing and business management roles in the telecom supplier business sector. He is also a U.S. patent holder.

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