Microwave Engineering Europe February 2000 Cover story Our cover article this month looks at the new fractal structures being used for capacitors on CMOS circuits. One of the main challenges in developing CMOS devices for RF applications is to minimise the effect of the inherent process variations on circuit parameters. Passives won't lie down How exciting can a passive component get? Judging by our Focus on Passives, the excitement index is rising as the drive for performance, miniaturization, integration and cost reduction continues unabated. That drive is taking components onto new substrates and allowing integration into semiconductor technologies that have previously not been suitable for radio frequency circuits. It's a core theme again at the International Solid State Circuits Conference in San Francisco this month. Among the regulars presenting there is Michiel Steyaert from Leuven with a 2V cellular transceiver front end in CMOS. The circuit includes, on-chip, an octagonal balanced inductor which is at the heart of the voltage controlled oscillator. Another piece of CMOS work that looks interesting is the remote pressure sensor developed at the Fraunhofer Institute which uses RF transmission of power and data. There's something rather special about a wireless technology which really is, well, wireless. Power is drawn from the carrier and proximity to the power source is the trigger mechanism for the device starting to collect data. The ISSCC event is, at the time of writing, just a few days away and we will bring you a full report in the March issue of Microwave Engineering Europe. We will also be following the circuit technology trail in MEE's first dedicated Workshop on this technology, scheduled for March 28th in Bracknell, UK. The RF Circuits Workshop draws together some authors who are well known at the circuit world of ISSCC, including direct-conversion pioneer Jan Sevenhans and IC expert Peter Saul, with some who are more familiar in the RF world of power amplifiers and MMICS. The papers cover SiGe, CMOS and BiCMOS and both the integration and packaging techniques to make best use of the core technology. MEMSCAP and Silicon Systems Design have agreed to sponsor the workshop. Details of the RF Circuits Workshop programme are available on the Microwave Engineering Online web site, www.mwee.com . Another new service through the site is online registration. If you're reading someone else's copy of this magazine and want to receive your own, or whenever you receive the annual letter reminding you that you need to renew your subscription, you can register online through www.mwee.com. No need for a stamp! While you're there, take a look at the other facilities on the site, including the directory of suppliers, the archive search facility, and the Online bookshop which we will be expanding within the next few weeks to offer technical books. We think that you will find it useful and would like to hear how you get on. Paul Jackson

Contents In focus VNA gets set up for power amplifier test; MWEE has new look for 2000; Multi-component module with integrated connector; Parametric technique enhances PAE in PA. The Greenbox multi-carrier amplifier from Wireless Systems international offers up to 12% efficiency. Focus on Passive components integration CMOS capacitors characterized; PINs perform in plastic at 5GHz; Crossband coupler combines channels; Resistors in print for LTCC packaging; MMICs minimise filter losses. A dual-band switchable IF VCO for GSM/PCS handsets Many of today's handset cellular telephones are multi-functional, multi-band units. They are complex RF systems with frequency plans requiring multiple RF sources. To accomplish this, the number of VCOs can be increased, however, this is expensive and requires more PCB area. This approach strongly contradicts current market trends. A straightforward solution proposed in this paper by Peter Shveshkeyev of Alpha Industries Inc., is using switchable (multi-band) VCOs. Experimental characterisation of a waveguide/coaxial line PIN diode switch In this paper by J.R.G. Twisleton, formerly a consultant to EEV Ltd, the isolation and insertion loss characteristics, the diode voltage, current and power dissipated, and the tuning by the junction susceptance, of a waveguide switch with a pin diode terminating a coaxial stub are considered. IEEE 802.11 or ETSI BRAN HIPERLAN/2: Who will win the race for a high speed wireless LAN standard? Two major standardization bodies are currently working towards a standard for high speed wireless LANs: IEEE 802.11 and ETSI BRAN HIPERLAN/2. This paper, by Andreas Hettich and Matthias Schröther, which was presented at European Wireless'99 at European Microwave Week in Munich last October, gives an overview of the standards and compares the performance of both. Sommaire d'articles Zusammenfassung der Artikel New Products and Data Calendar Classified - Catalogue Update & Appointments