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Microwave Engineering Europe Magazine



Microwave Engineering Europe October 2000

Cover story

October 2000In this issue we unveil our latest CAD Benchmark, a challenging 3D free-space electromagnetic problem based on a Vivaldi antenna structure, for which we will publish solutions from six leading CAD vendors in the November issue

Plugging into the network

The more observant among you may have noted that a new feature quietly made a appearance in the editorial pages last month. Wireless Watch is a selection of news stories of particular interest to the microwave and wireless community, drawn from EDTN, the CMP Electronics global news network. For over a year now we have been featuring news on our Web site, www.mwee.com. With the integration of our online newsdesk into EDTN, and the wealth of additional resources this brings us, it is timely to start including highlights from the online service into our printed edition. Some of the stories are edited by our own news correspondent, Lisa Townshend, while others originate from our sister publications within CMP and EDTN, including EE Times and Semiconductor Business News.

The story we have selected this month, on page 14, is one that I believe will be of great concern to us in Europe. In view of the amount of EC funding invested in the development of the HiperLAN2 standard, through the ETSI BRAN project and the preceding ACTS programmes on WLAN, it is demoralising to see it criticised in such a prejudiced fashion by a heavyweight such as Intel. The US semiconductor and IT giant is calling for the industry to unite behind 802.11a in preference to HiperLAN2 as a 5GHz standard, despite claims that the quality of the service of the latter is demonstrably superior. Surely this is ample demonstration that the "not invented here" mindset that left the USA at odds with the rest of the world in cellular standards is still alive and well.

A conflict of this type benefits no-one in the long term. Although interoperability is arguably less important in WLAN than in cellular, Intel is right to call for unity, but it would do better to do so in a more inclusive fashion. There is still time for Intel to enter into a constructive dialogue with HiperLAN2's supporters, who include Dell, TI, Motorola and Silicon Wave from the States as well as European leaders such as Ericsson, Nokia, Philips and Bosch. It must be possible to avoid this animosity and find a way forward that will benefit all parties. It is especially important not to ignore or belittle all the work that has taken place in Europe, not least by ETSI itself, in developing HiperLAN2 as a robust standard for 5GHz wireless LAN.

On a lighter note, I have just returned from an exhausting but exhilarating week in Paris, at the 3rd European Microwave Week. The event goes from strength to strength, with conference attendance again showing an increase over last year. In addition a total of 158 exhibitors were showing off their wares, with several major product launches in evidence. Some of the highlights are featured in the In Focus section this month: there will be further coverage, including a photo gallery and some of the prize-winning papers, in the November issue.

Please take time too to look at our latest CAD Benchmark on page 55 - the first time we have featured a free-space 3D antenna problem. Next month six vendors of 3D EM software will present their solutions, which should provoke plenty of discussion both online and in print.

Helen Duncan


Contents

In focus
New models on parade in Paris

Wireless Watch
Intel urges engineers to unite on WLAN standards

Focus on Test and Measurement
Instruments gear up for Third Generation

N-ZIF in our GSM - An innovative architecture towards multi-mode cellular handset
The operational advantages and design considerations of using near-zero IF architecture in mobile handsets are discussed in this paper by Yvan Droinet. A triple band transceiver for GSM handsets, is then described, that implements this architecture for GPRS front ends.
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Comparison between devices fabricated on 3-5 semiconductors and wide band gap materials
Wide band gap semiconductor materials allow high voltage swings to be sustained across the device, giving the potential for high RF power densities. This paper by C.H.Oxley and O.Buiu reviews the characteristics of SiC,GaN and InN in direct comparison to those of GaAs and InP in relation to their use in RF devices.

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Frequency stable electrical components for wireless communications
The dependence of the resonant frequency of a superconducting planar resonator on the material properties and thicknesses of the superconductors, the dielectric (substrate) and the buffer layers is discussed in this paper by Farhat Abbas. An example of YBCO thin film on rutile with sapphire buffer layers is computed, with the conclusion that if a turning point can be realized at T = 60K, and the temperature controlled to better than 0.1mK, then frequency standards with stabilities of around 10-15 should be attainable.
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CAD - The 2000 CAD Benchmark unveiled
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