SAN JOSE, Calif. -- Cree Inc. has rolled out a foundry process design kit (PDK) for a technology called gallium nitride (GaN) high electron mobility transistor (HEMT).
Cree's GaN foundry is a wide-bandgap, monolithic microwave integrated circuits (MMICs) facility. The company's GaN-on-silicon carbide technology is said to have higher power density, thermal conductivity and operating voltage over GaAs or silicon MMIC technologies.
The Cree PDK works with the Advanced Design System (ADS) from Agilent Technologies Inc. It can enable radio-frequency (RF) and microwave designers to shorten the development cycle for MMICs used in high-power, high-performance electronic systems.
The Cree GaN kit includes microstrip lines, discontinuities, scalable capacitors, inductors and resistors, pads, vias, airbridges and active devices (HEMTs) at multiple biases.
