The LDMOS technology used in the MRFX1K80H helps increase the output power in wideband applications while maintaining appropriate output impedance.
The LDMOS transistor is designed to deliver 1800-W of a continuous wave at 65-V for RF applications from 1.8 to 470 MHz with the ability to handle a VSWR of 65-to-1 at all phase angles. The device offers impedance matching to 50 Ohms, helping to reduce the overall development time.
Designed for an extended power range from 30-V to 65-V, the MRFX1K80H features a high breakdown voltage that provides enhanced reliability and higher efficiency. The high voltage lowers the current in the system, limiting the stresses on DC power supplies thereby reducing magnetic radiation. The higher output power also helps decrease the number of transistors to combine and simplify the power amplifier complexity and reduce the overall size.
The MRFX1K80H is suitable for linear applications with appropriate biasing and offers integrated electrostatic discharge (ESD) protection for improved Class C operation. Target applications include industrial, scientific, and medical (ISM) applications as well as broadcast, aerospace, and mobile radio equipment.