Ampleon showcases LDMOS and GaN RF PA portfolio

April 12, 2017 // By Jean-Pierre Joosting
Ampleon has announced its participation at the forthcoming Electronic Design Innovation Conference (EDI CON) held in Shanghai, China from April 25-27, 2017, where it will showcase its latest RF amplifier devices and modules suitable for use in mobile broadband, broadcast, industrial, radar and avionics, and RF energy applications.

Product demonstrations include a 400-W S-band pallet, a 900-W UHF broadcast design and a 2000-Wt 127-MHz ISM band example. Also on show will be a 433-MHz, 200-W pallet with integrated sensing for use in RF energy applications.

Ampleon’s LDMOS product portfolio includes broadband devices, transistors for Doherty amplifiers, extremely rugged high power devices designed for industrustrial, scientific and medical applications, and fransistors for civilian radars. The GaN on SiC line-up includes high power broadband devices and drivers.

Further, Ampleon staff will participate in the conference programme as follows:

  • Tuesday, April 25 at 1.50pm , Pinglu Chen, Managing Director, Ampleon Semiconductors (Hefei) Co. Ltd, China, Ampleon will take part in the RF Energy Alliance panel workshop titled “Solid-State RF Energy in 2017: The volume breakthrough is finally there, is it not?”
  • Wednesday, April 26 at 1.45pm , Francis Auvray, Senior RF Engineer at Ampleon will chair a workshop on 20 W Fully Integrated 3.5 GHz GaN Doherty MMICs for 5G Applications.
  • Wednesday, April 26 at 1.45pm , Nick Pulsford, Senior Vice President R&D/Technology at Ampleon will participate in the panel regarding trends in mobile infrastructure.

www.ediconchina.com/registration.asp
www.ampleon.com