Respectively based on Cree’s high power density 50 V, 0.25 μm and 0.4 μm GaN on silicon carbide (SiC) foundry processes, the X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities and are ideal for use in a broad range of civil, military, and government radar applications, such as: weather monitoring, marine radar, air traffic control, maritime vessel traffic control, port security, defense tracking, and vehicle speed detection.
Designed for use in 7.9 to 9.6 GHz X-Band radar amplifier systems, the 50 W CGHV96050F2 and 100 W CGHV96100F2 50-Ohm internally matched field effect transistors (FETs) provide several performance benefits over comparable silicon (Si) or gallium arsenide (GaAs) components, including: higher power added efficiency, breakdown voltage, saturated electron drift velocity, and thermal conductivity. Supplied in metal/ceramic flange packages for optimal electrical and thermal performance, both new X-Band devices also offer greater power density and wider bandwidths than GaAs transistors.
Designed for use in 2.9 to 3.5 GHz S-Band radar amplifier systems, the 150 W CGHV35150 and 400 W CGHV35400F, both of which are specified at 85°C case, exhibit uniform performance at high temperatures and feature considerably smaller footprints than competing GaAs or Si RF technology, enabling enhanced design flexibility. Both S-Band devices can be supplied in metal/ceramic flange packages and the 150 W components are also available in pill packages.
Large signal models are available at Agilent ADS and AWR Microwave, and all four aforementioned GaN HEMT devices and their corresponding test boards are currently available at Digi-Key for order and delivery.