Joining this capital increase, investors LRM and Capricorn Cleantech Fund re-confirm their continuous support for EpiGaN’s market and technology strategies.
EpiGaN, with its production site at the Corda Campus in Hasselt/Belgium, is a global supplier of GaN-on-Si and GaN-on-SiC (Silicon Carbide) material solutions. This next-generation semiconductor technology has started to revolutionize important market segments such as the energy sector where GaN enables smaller, lighter and more energy-efficient power conversion systems, such as consumer power supplies, and data servers. Gallium Nitride is also the key technology enabler for wireless communication, offering the capability for a larger data exchange capacity, low latency, and enhanced mobile broadband communication as required for transitioning from LTE/4G to 5G, as well as autonomous driving and the Internet of Things.
Over the past few years EpiGaN has released innovative and unique product solutions for epitaxial GaN layer structures deposited on 150mm and 200mm Si substrates, in particular with its in-situ SiN (Silicon Nitride) passivation, which enables more robust high-performance devices. EpiGaN's product portfolio covers state-of-the-art technology for low-loss power switching, next-generation 5G radio-frequency/mobile communication and sensor applications.
The company was founded in 2010 as a spin-off from renowned Belgian micro- and nano-electronics research center imec.