The LMG1020 and LMG1210 offer switching frequencies of 50 MHz while improving efficiency and enabling five times smaller solution sizes previously not possible with silicon MOSFETs, the company says. The LMG1020 is a single, low-side GaN driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications, while the LMG1210 is a 200-V, half-bridge high-performance GaN FET driver designed for applications requiring high switching speed, minimized dead time, as well as high efficiency.
Featuring a claimed industry-best drive speed as well as a minimum pulse width of 1 ns, the 60-MHz LMG1020 enables high-accuracy lasers in industrial LIDAR applications. Its wafer-level chip-scale (WCSP) package measures only 0.8 x 1.2 mm, minimizing gate-loop parasitics and losses, further boosting efficiency.
Designed for GaN FETs up to 200 V, the 50-MHz LMG1210 features adjustable dead time control designed to improve efficiency by as much as 5% in high-speed DC/DC converters, motor drives, and Class-D audio amplifiers, as well as other power-conversion applications. It is offered as having the industry's highest common-mode transient immunity (CMTI) of more than 300 V/ns, enabling designers to achieve high system-noise immunity.
Other key specifications include a propagation delay of 2.5 ns (LMG1020) and 10 ns (LMG1210) and a switch-node capacitance of 1 pF (LMG1210). Evaluation modules ( LMG1020EVM-006 and LMG1210EVM-012) and SPICE models are available, as are the Nanosecond Laser Driver Reference Design for LiDAR and Multi-MHz GaN Power Stage Reference Design for High-Speed DC/DC Converters .
Prototype samples of the LMG1020 and LMG1210 are now available.