GaN power amplifier covers 28-32 GHz with high linearity

September 03, 2014 // By Jean-Pierre Joosting
Custom MMIC has announced the addition of the CMD217, a 28 to 32 GHz GaN power amplifier in die form, to their growing product line.

The CMD217 features greater than 20 dB of gain across its operating frequency range, with a corresponding output 1 dB compression point of +36.7 dBm and saturated output power of +39.3 dBm (8.5 W). Power added efficiency for the MMIC is 28% to 35% across the band.

The CMD217 is a fully matched 50 ohm design and only requires external bypass capacitors to complete the bias circuitry. The die is passivated for increased reliability and moisture protection. Ideal applications for the CMD217 include Ka-band communication systems, where high power and high linearity are required.