GaN on SiC HEMT pulsed power transistor targets avionics

February 05, 2014 // By Jean-Pierre Joosting
A GaN on SiC HEMT power transistor for L-Band pulsed radar applications, from M/A-COM Technology Solutions, operates between the 960 MHz to 1215 MHz range.

The MAGX-000912-500L00 is a gold-metalized matched GaN on SiC RF power transistor optimized for pulsed avionics and radar applications. It provides 500 W of output power with 19.8 dB of gain and 60% efficiency. The device also boasts very high breakdown voltages, which allows for reliable and stable operation at more extreme load mismatch conditions.

The transistor is ideally suited for broadband avionics applications in the 960 to 1215 MHz range such as Traffic Collision Avoidance Systems (TCAS), Distance Measuring Equipment (DME) and Datalinks. It is assembled using state of the art design and packaging assembly, and is offered in both flange and flangeless ceramic packages.

Highly robust, the transistor boasts a mean time to failure (MTTF) of 600 years.