The two companies will work together to initially research and develop RapidIO switches operating at 40 Gbps per port based on the RapidIO 10xN specification. Switches developed under this program will enable manufacturers of next-generation wireless base stations, Cloud RAN (radio access network), mobile-edge computing and other evolving carrier networks to stay ahead of growing data usage accompanying the use of portable devices.
The RapidIO 10xN switches will offer an optimal combination of low 100 nsec latency, 40 Gbps per port of bandwidth and scalability to greater than 4 billion nodes in a network. The jointly developed devices will target the new generation of base station platforms such as LTE-Advanced (LTE-A), C-RAN, and 5G, but will also find use in emerging architectures such as base stations co-located with high-performance computing (HPC) platforms.
IDT's production 20 Gbps per port switches are currently used for clustering of DSPs, microprocessors, and ASICs in existing 3G and 4G base stations deployed worldwide. Under the collaboration, the companies will build on the current production switch and bridge portfolio, with plans to make their first jointly developed products available in the second half of 2015.
“This collaboration between IDT and eSilicon, which will move RapidIO technology to 40 Gbps per port and beyond going to 100 Gbps, is a significant step forward for the growing RapidIO ecosystem,” said Rick O’Connor, executive director of RapidIO.org. “There’s no doubt this collaboration will be welcomed by developers of performance-critical computing applications requiring increased bandwidth and capacity, and will accelerate the deployment of RapidIO 10xN technology by processor, DSP and FPGA partner companies in the RapidIO ecosystem.”