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TowerJazz announces RF SOI 65nm ramp

TowerJazz announces RF SOI 65nm ramp

Business news |
By Wisse Hettinga



With best in class metrics, the 65nm RF SOI process from TowerJazz enables the combination of low insertion loss and high power handling RF switches with options for high-performance low-noise amplifiers as well as digital integration. The process can reduce losses in an RF switch improving battery life and boosting data rates in handsets and IoT terminals.

According to Mobile Experts, LLC, a market research firm for mobile communications, the mobile RF front-end market is estimated to reach $22 billion in 2022 from an estimated $16 billion in 2018. TowerJazz’s breakthrough RF SOI technology continues to support this high-growth market and is well-poised to take advantage of next-generation 5G standards which will boost data rates and provide further content growth opportunities in the coming years.

TowerJazz is also proud to announce its relationship with Maxscend, a provider of RF components and IoT integrated circuits, ramping in this new technology.

“We chose TowerJazz for its advanced technology capabilities and its ability to deliver in high volume while continuously innovating with a strong roadmap. We specifically selected its 300mm 65nm RF SOI platform for our next-generation product line due to its superior performance, enabling low insertion loss and high power handling,” said Zhihan Xu, Maxscend Chief Executive Officer.

www.towerjazz.com
www.soitec.com
www.maxscend.com

 

See also: GloFo drives silicon photonics roadmap forward
See also: Silicon photonics design kit based on the Mentor Calibre nmPlatform
See also: TowerJazz targets automotive markets with advanced RF and high performance analog

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