At Radio Wireless Week last year, Mitsubishi Electric Corporation and Mitsubishi Electric Research Laboratories presented a paper titled “3.0-3.6 GHz Wideband, over 46% Average Efficiency GaN Doherty Power Amplifier with Frequency Dependency Compensating Circuits,” that described this wide-band Doherty power amplifier design technique for next generation LTE base stations using GaN transistor technology.
The demonstration this year will further illustrate the ability to linearize an ultra-wideband signal applied to Mitsubishi Electric’s GaN power amplifier using an advanced pre-distortion technique provided by NanoSemi, Inc.
“The proliferation of smartphones and tablets will require a dramatic increase in wireless capacity of base stations. To meet this demand, mobile technologies are moving to next generation LTE in which the wireless capacities are increased by allocating multiple simultaneous frequency bands (carrier aggregation) above 3-GHz,” said Kyle Martin, VP and General Manager, Mitsubishi Electric US, Inc., Semiconductor Division. “Operating in multiple simultaneous frequency bands usually requires multiple power amplifiers to cover each frequency band, leading to an increase in the size of base stations.”
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