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Thermally enhanced packages for power semiconductors up to at least 6 GHz

By Jean-Pierre Joosting
Microwave Engineering
April 21, 2008 (07:44 AM EST)
 


San Diego, CA — StratEdge has introduced a family of small outline thermally enhanced molded ceramic packages that can be used for silicon, silicon carbide, gallium nitride, and other compound semiconductors in power integrated circuit applications. Specific devices include amplifiers, discrete transistors, and diodes where greater than 0.5 W power is consumed.

These thermally enhanced packages are designed for reliability and to mitigate the inherent stresses of brazing dissimilar materials together. All materials used in the packages have matched coefficients of expansion. They are assembled using a glass-to-metal seal process combined with gold germanium brazing, resulting in a rugged and reliable package. The packages can handle temperatures up to 360 degrees Celsius. A hermetic seal provides enhanced reliability for the device and offers protection from harsh environmental conditions, meeting military standard requirements. Packages in this series are sealed with metal or ceramic lids that have gold-tin solder preforms.

These packages incorporate copper composite bases or copper inserts for enhanced thermal dissipation. Devices are mounted directly to the metal bases thus providing excellent electric ground to the backside of the chip. They provide superior electrical performance for frequencies up to at least 6 GHz. For controlled impedance devices, transition designs with higher frequency performance can be utilized.

Packages are available in various shapes, sizes, and lead counts. All can be provided with gull wing-shaped leads for surface mounting. A popular package is the two lead G1010M-2C supplied with copper insert. The G1010M-2C has a 0.100 inch square (2.5 mm square) outline with a 0.030 inch (0.75 mm) by 0.055 inch (1.4 mm) die attach area.


Visit www.stratedge.com for further information.


 
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