5G-antenna with integrated GaN power amplifiers

February 20, 2019 //By Jean-Pierre Joosting
5G-antenna with integrated GaN power amplifiers
Based on GaN-on-SiC technology from Qorvo, Gapwaves has announced an active 28 GHz antenna that demonstrates high EIRP with low power consumption while maintaining good thermal handling, which is essential for the power amplifiers.

The Gapwaves 28 GHz active 5G-antenna features integrated GaN front-end MMICs from Qorvo. One of few solutions meeting the future performance needs of 5G Mobile Access and Fixed Wireless Access networks, the 28 GHz high EIRP beam forming antenna with a high performing filter and transition from PCB to waveguide is a further development from a previous 5G beamforming antenna – released in August 2018.

The integration of the dual channel GaN front-end module together with the beamforming chip-set results a state-of-the-art prototype built on standard components and Gapwaves waveguide technology. Measurements performed on the prototype have shown very good performance, high antenna efficiency with low losses and high EIRP, confirming the results that were presented earlier. The building practice of the active antenna has also shown excellent thermal performance.

The antenna prototype and measurement results will be presented at Mobile World Congress in Barcelona next week. Further releases of the 28 GHz 5G-antenna will include features such as up- and down-conversion and digital beam forming.

Lars-Inge Sjöqvist, CEO Gapwaves comments, “Built on standard components and Gapwaves waveguide technology, this product is one of few on the market that truly meets the requirements of future 28 GHz 5G-networks. Power consumption and large coverage are key elements when realizing the future’s millimeter wave mobile networks.”

www.gapwaves.com

 

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