GaN HEMT addresses UHF radar market

February 13, 2018 // By Jean-Pierre Joosting
Wolfspeed, a Cree Company, has extended its family of 50 V transistors with the introduction of the CGHV40180, an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) that targets the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component lifecycle availability by implementing GaN RF power devices.

The latest UHF GaN RF device delivers greater power density and output power than competing Si LDMOS devices, enabling radar applications to benefit from greater range within the same design footprint.

The CGHV40180 is available in flange and pill package styles and designed to optimize performance for radar power amplifiers, as well as military communications applications from 20 to 1000 MHz. These additional applications include very-high frequency (VHF) and UHF public safety radios and UHF tactical radios. At 250 W typical output power, the device delivers up to 67 percent more continuous wave (CW) power than traditional Si devices in the same size package, providing significantly more signal range for greater detection and discrimination capabilities that are critical to defense and public safety.

The CGHV40180 claims to offer the industry’s highest output power in its class with 270-W CW typical output power from 800 to 1,000 MHz. Additionally, the device offers low power consumption with 75 percent drain efficiency. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGHV40180 ideal for linear and compressed amplifier circuits.

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