In this study, the In0.28Ga0.72Sb nanowires (bandgap 0.69 eV) showed a high responsivity of 6000 A/W to IR with high response and decay times of 0.038 ms and 0.053 ms, respectively, which are some of the best times so far. The fast IR response speed can be attributed to the minimized crystal defects, as also illustrated by a high hole mobility of up to 200 cm2/Vs, according to Prof. Johnny C. Ho from CityU.
The minimized crystal defect is achieved by a "catalyst epitaxy technology" first established by Ho's group. The III-V compound nanowires are catalytically grown by a metal catalyst such as gold, nickel, etc.
"These catalyst nanoparticles play a key role in nanowire growth as the nanowires are synthesized layer by layer with the atoms well aligned with those in the catalyst," said HAN Ning, a professor at IPE and senior author of the paper.