Semiconductor material quality measuring technique 100,000 times more sensitive

April 11, 2019 //By Jean-Pierre Joosting
Semiconductor material quality measuring technique 100,000 times more sensitive
A team of researchers has developed a measuring technique to characterize materials at scales much smaller than any current technologies – and is expected to accelerate the discovery and investigation of 2D, micro- and nanoscale materials.

The researchers are able to accurately measure semiconductor properties of materials in small volumes, which helps engineers determine the range of applications for which such materials may be suitable in the future, particularly as the size of electronic and optical devices continues to shrink.

Daniel Wasserman, an associate professor in the Department of Electrical and Computer Engineering in the Cockrell School of Engineering, led the team that built the physical system, developed the measurement technique capable of achieving this level of sensitivity and successfully demonstrated its improved performance. The work was reported in Nature Communications.

The research team used a design approach that focused on developing the capability to provide quantitative feedback on material quality, with particular applications for the development and manufacturing of optoelectronic devices. The method demonstrated is capable of measuring many of the materials that engineers believe will one day be ubiquitous to next-generation optoelectronic devices.

In an optoelectronic material, the amount of time that the electrons remain "photoexcited," or capable of producing an electrical signal, is a reliable indicator of the potential quality of that material for photodetection applications. The current method used for measuring the carrier dynamics, or lifetimes, of photoexcited electrons is costly and complex and only measures large-scale material samples with limited accuracy.

This is a rendering of the microwave resonator showing the (blue) microwave signal's size change resulting from a light pulse (red) once the pulse hits the infrared pixel (micrograph image of pixel is shown in the inset). Image courtesy of Cockrell School of Engineering, The University of Texas at Austin.

Vous êtes certain ?

Si vous désactivez les cookies, vous ne pouvez plus naviguer sur le site.

Vous allez être rediriger vers Google.